Two- and three-dimensional simulations of anomalous current in small-dimension pn junctions integrated with an ultra-high density

We have analyzed the current flowing through small-size pn junctions under reverse-biased conditions using two- and three-dimensional device simulators. Spatially localized deep trap models were introduced as an origin of the high-level current, and the electrical behavior of deep traps was precisely studied. By comparing our calculation results with experimental data, this theoretical study has indicated that the quantity of deep traps would be N/sub T/=1,000 with C=10/sup -8/ cm/sup 3//s. This number of deep-traps is not unrealistic, but is extremely low for detection. Further research, especially into ways of detecting such a small number of deep-traps, is required.