• DocumentCode
    2517715
  • Title

    Effect of oxidation ambient on phosphorus diffusion in SOI

  • Author

    Uchida, H. ; Asai, H. ; Ieki, Y. ; Ichimura, Makoto ; Chunlin Shao ; Arai, E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    194
  • Lastpage
    197
  • Abstract
    Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.
  • Keywords
    diffusion; doping profiles; elemental semiconductors; oxidation; phosphorus; point defects; secondary ion mass spectra; silicon; silicon-on-insulator; SIMS; SOI; Si:P; diffusion profiles; four point probe; oxidation ambient; phosphorus diffusion; point defect pair diffusion model; spreading resistance; Conductivity measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Nitrogen; Oxidation; Probes; Shape; Silicon on insulator technology; Strontium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742745
  • Filename
    742745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517715