Design and Analysis of an I-shaped TSV Structure for 3D SiP

Author

Zhao, Liwei ; Liao, Hongguang ; Miao, Min ; Jin, Yufeng

Author_Institution

Nat. Key Lab. of Micro/Nano Fabrication Technol., Peking Univ., Beijing, China

fYear

2008

fDate

9-12 Dec. 2008

Firstpage

200

Lastpage

205

Abstract

A TSV (Through Silicon Via) structure with I-shaped structure for 3D packaging is proposed in this paper. Based on the notching effect and gradient etching process of DRIB, this kind of structure can be fabricated in the existed facilities, without additional processes and equipments. According to microwave transmission line theory and by using finite element full-wave analysis tool, simulation of the transmission characteristic for the novel TSV vertical interconnections with I-shaped vias has been performed. Simulation results demonstrate that the excellent performances can be achieved.

Keywords

finite element analysis; integrated circuit interconnections; system-in-package; transmission line theory; 3D SiP; I-shaped TSV structure; finite element full-wave analysis; microwave transmission line theory; through silicon via; vertical interconnections; Analytical models; Etching; Finite element methods; Microwave devices; Microwave theory and techniques; Packaging machines; Performance analysis; Silicon; Through-silicon vias; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th

Conference_Location

Singapore

Print_ISBN

978-1-4244-2117-6

Electronic_ISBN

978-1-4244-2118-3

Type

conf

DOI

10.1109/EPTC.2008.4763434

Filename

4763434