Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs

Author

Sano, N. ; Fischetti, M.V. ; Laux, S.E.

Author_Institution

Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan

fYear

1998

fDate

19-21 Oct. 1998

Firstpage

198

Lastpage

201

Abstract

The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; impact ionisation; indium compounds; pseudopotential methods; silicon; spin-orbit interactions; valence bands; GaAs; Ge; In/sub 0.53/Ga/sub 0.47/As; InAs; Si; ab-initio ionization transition rates; energy splitting; hole-initiated impact ionization; local pseudopotentials; nonlocal pseudopotentials; spin-orbit interaction; split-off band; valence band; Data mining; Dielectrics; Ducts; Gallium arsenide; Impact ionization; Indium gallium arsenide; Lattices; Orbital calculations; Photonic band gap; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on

Conference_Location

Osaka, Japan

Print_ISBN

0-7803-4369-7

Type

conf

DOI

10.1109/IWCE.1998.742746

Filename

742746