• DocumentCode
    2517730
  • Title

    Source/drain-doping engineering for optimal nanoscale FinFET design

  • Author

    Trivedi, V.P. ; Fossum, J.G.

  • Author_Institution
    Florida Univ., Gainesville, FL, USA
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    192
  • Lastpage
    194
  • Abstract
    We clearly reveal the significance of bias-dependent effective channel length (Leff) in undoped ultra-thin silicon body (UTB) FinFETs, and its subtle dependence on RSD on NSD(y), define a systematic approach to design optimization of nanoscale FinFETs (and of UTB CMOS in general) via S/D-doping engineering.
  • Keywords
    CMOS integrated circuits; doping profiles; elemental semiconductors; field effect transistors; nanotechnology; semiconductor device models; semiconductor doping; semiconductor thin films; silicon; Si; bias dependent effective channel length; design optimization; optimal nanoscale FinFET design; source-drain doping engineering; subtle dependence; undoped ultrathin silicon body; Design engineering; Design optimization; Doping profiles; Electrons; FinFETs; High definition video; Immune system; Medical simulation; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391612
  • Filename
    1391612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517730