DocumentCode :
2517730
Title :
Source/drain-doping engineering for optimal nanoscale FinFET design
Author :
Trivedi, V.P. ; Fossum, J.G.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
192
Lastpage :
194
Abstract :
We clearly reveal the significance of bias-dependent effective channel length (Leff) in undoped ultra-thin silicon body (UTB) FinFETs, and its subtle dependence on RSD on NSD(y), define a systematic approach to design optimization of nanoscale FinFETs (and of UTB CMOS in general) via S/D-doping engineering.
Keywords :
CMOS integrated circuits; doping profiles; elemental semiconductors; field effect transistors; nanotechnology; semiconductor device models; semiconductor doping; semiconductor thin films; silicon; Si; bias dependent effective channel length; design optimization; optimal nanoscale FinFET design; source-drain doping engineering; subtle dependence; undoped ultrathin silicon body; Design engineering; Design optimization; Doping profiles; Electrons; FinFETs; High definition video; Immune system; Medical simulation; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391612
Filename :
1391612
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2517730
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