Title :
Transient analysis of impact ionization anisotropy using realistic band structure for GaAs
Author :
Jung, H.K. ; Nakano, H. ; Taniguchi, K.
Author_Institution :
Dept. of Electron. Eng., Kunsan Nat. Univ., Chonbuk, South Korea
Abstract :
We have investigated anisotropic properties for impact ionisation of GaAs using Monte Carlo simulation and a realistic energy band structure. The realistic energy band structure is derived from the empirical pseudopotential method and impact ionisation scattering rates are calculated by Fermi´s golden rule. For observing anisotropic properties of impact ionisation coefficients, a Monte Carlo simulation has been performed after electric fields are applied along different directions.
Keywords :
III-V semiconductors; Monte Carlo methods; band structure; gallium arsenide; impact ionisation; pseudopotential methods; Fermi´s golden rule; GaAs; Monte Carlo simulation; band structure; empirical pseudopotential method; impact ionization anisotropy; scattering rates; transient analysis; Anisotropic magnetoresistance; Circuits; Electrons; Gallium arsenide; Hot carriers; Impact ionization; Information systems; Radio frequency; Scattering; Transient analysis;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742747
