Managing Losses in Through Silicon Vias with Different Return Current Path Configurations

Author

Curran, Brian ; Ndip, Ivan ; Guttovski, Stephan ; Reichl, Herbert

Author_Institution

Fraunhofer Inst. for Reliability & Microintegration, Berlin, Germany

fYear

2008

fDate

9-12 Dec. 2008

Firstpage

206

Lastpage

211

Abstract

The high bulk conductivity of silicon, leading to high attenuation, will become a significant challenge for designers of silicon-based system-in-package modules. In this paper, losses in TSV interconnect schemes are quantified with full-wave simulations. Several techniques for optimizing transmission using different return current paths are investigated, including ground shielding vias and two coaxial via structures. Then, a comparison of the losses in structures with different return current paths is made.

Keywords

electrical conductivity; electromagnetic shielding; elemental semiconductors; integrated circuit interconnections; modules; silicon; system-in-package; transmission lines; TSV; bulk conductivities; coaxial via structures; full-wave simulations; ground shielding vias; insertion loss; interconnect; return current path configurations; system-in-package modules; through silicon vias; two-wire transmission line; Attenuation; Bonding; Coaxial components; Conductivity; Frequency; Integrated circuit interconnections; Packaging; Silicon; Through-silicon vias; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th

Conference_Location

Singapore

Print_ISBN

978-1-4244-2117-6

Electronic_ISBN

978-1-4244-2118-3

Type

conf

DOI

10.1109/EPTC.2008.4763435

Filename

4763435