• DocumentCode
    2517759
  • Title

    DGSOI devices operated as velocity modulation transistors

  • Author

    Gamiz, F. ; Sampedro, C. ; Godoy, A. ; Prunnila, M. ; Ahopelto, J.

  • Author_Institution
    Dept. de Electron., Granada Univ., Spain
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable Ion/Ioff ratios even at room temperature.
  • Keywords
    MOSFET; electron mobility; elemental semiconductors; silicon-on-insulator; 293 to 298 K; SOI devices; Si; channel length; double gate silicon-on-insulator transistor; room temperature; subpicosecond region; switching time; velocity modulation transistor; Charge carrier density; Computational modeling; Degradation; Electromagnetic compatibility; Electron mobility; Frequency; Particle scattering; Quantum computing; Switches; Transient response;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391614
  • Filename
    1391614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517759