DocumentCode :
2517759
Title :
DGSOI devices operated as velocity modulation transistors
Author :
Gamiz, F. ; Sampedro, C. ; Godoy, A. ; Prunnila, M. ; Ahopelto, J.
Author_Institution :
Dept. de Electron., Granada Univ., Spain
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
198
Lastpage :
199
Abstract :
We have shown that a double gate silicon-on-insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT), showing switching times in the sub-picosecond region regardless of the channel length, and with acceptable Ion/Ioff ratios even at room temperature.
Keywords :
MOSFET; electron mobility; elemental semiconductors; silicon-on-insulator; 293 to 298 K; SOI devices; Si; channel length; double gate silicon-on-insulator transistor; room temperature; subpicosecond region; switching time; velocity modulation transistor; Charge carrier density; Computational modeling; Degradation; Electromagnetic compatibility; Electron mobility; Frequency; Particle scattering; Quantum computing; Switches; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391614
Filename :
1391614
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2517759
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