Title :
Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation
Author :
Tanaka, T. ; Yamaguchi, Satarou ; Yamaguchi, Satarou ; Sukegawa, K. ; Goto, Hiromi
Author_Institution :
Technol. Dev. Div., Fujitsu Ltd., Kawasaki, Japan
Abstract :
We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.
Keywords :
MOSFET; Monte Carlo methods; hot carriers; ion implantation; semiconductor device models; semiconductor doping; device lifetime; full band Monte Carlo simulation; gate current; hot carrier; implant tilt angle; pocket-implanted nMOSFET; sub-quarter micron nMOSFETs; substrate current; Charge carrier processes; Drain avalanche hot carrier injection; Electrons; Feedback; Hot carrier effects; Implants; MOSFET circuits; Monte Carlo methods; Steady-state; Stress;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742750
