Title :
Mesh Interconnects for Silicone Embedded Stretchable Silicon Electronics
Author :
Sosin, S. ; Zoumpoulidis, T. ; Bartek, M. ; Wang, L. ; Jansen, K.M.B. ; Ernst, L.J.
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands
Abstract :
A process development for stretchable silicon electronics encapsulated in a layer of polydimethylsiloxane is presented. Stretchability is achieved by segmenting the normally rigid silicon substrate into small islands (<2Ã2 mm2) and connecting these by flexible metal interconnects. The metal interconnects have a mesh shape providing stretchability and improved reliability. The mesh-shaped interconnects have been simulated and measured as free standing before being integrated in the final stretchable system design. PDMS (polydimethylsiloxane) encapsulation using either Elastosil or Sylgard, having good chemical and mechanical resistance, provides protection of the final system but it also helps during fabrication. The fabricated samples (ID array silicon islands with mesh interconnects embedded in Elastosil) have been mechanically and electrically tested and provide reversible stretchability to around 100%.
Keywords :
conducting polymers; flexible electronics; integrated circuit interconnections; silicon; silicon compounds; 1D array silicon islands; Elastosil; Si; SiO2; Sylgard; chemical resistance; flexible metal interconnects; mechanical resistance; mesh interconnects; mesh-shaped interconnects; metal interconnects; polydimethylsiloxane; silicon substrate; silicone embedded stretchable silicon electronics; stretchability; stretchable system design; Chemicals; Electric resistance; Electrical resistance measurement; Encapsulation; Fabrication; Joining processes; Protection; Shape; Silicon; Testing;
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
DOI :
10.1109/EPTC.2008.4763439