Title :
Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem
Author :
Houlet, P. ; Awano, Y. ; Yokoyama, N. ; Hamaguchi, C.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.
Keywords :
Monte Carlo methods; electrical conductivity; semiconductor device models; CPU time; accurate Monte Carlo modeling; box integration; cloud-in-cell; displacement current; ensemble Monte Carlo modeling; generalized Ramo-Shockley theorem; multi-port devices; short semiconductor devices; terminal currents; time-dependent terminal currents; Circuit noise; Conductors; Costs; Fluctuations; Laboratories; Monte Carlo methods; Noise reduction; Predictive models; Semiconductor device noise; Semiconductor devices;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742751