DocumentCode
2517808
Title
Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem
Author
Houlet, P. ; Awano, Y. ; Yokoyama, N. ; Hamaguchi, C.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
218
Lastpage
221
Abstract
The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.
Keywords
Monte Carlo methods; electrical conductivity; semiconductor device models; CPU time; accurate Monte Carlo modeling; box integration; cloud-in-cell; displacement current; ensemble Monte Carlo modeling; generalized Ramo-Shockley theorem; multi-port devices; short semiconductor devices; terminal currents; time-dependent terminal currents; Circuit noise; Conductors; Costs; Fluctuations; Laboratories; Monte Carlo methods; Noise reduction; Predictive models; Semiconductor device noise; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742751
Filename
742751
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