• DocumentCode
    2517808
  • Title

    Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem

  • Author

    Houlet, P. ; Awano, Y. ; Yokoyama, N. ; Hamaguchi, C.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    218
  • Lastpage
    221
  • Abstract
    The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.
  • Keywords
    Monte Carlo methods; electrical conductivity; semiconductor device models; CPU time; accurate Monte Carlo modeling; box integration; cloud-in-cell; displacement current; ensemble Monte Carlo modeling; generalized Ramo-Shockley theorem; multi-port devices; short semiconductor devices; terminal currents; time-dependent terminal currents; Circuit noise; Conductors; Costs; Fluctuations; Laboratories; Monte Carlo methods; Noise reduction; Predictive models; Semiconductor device noise; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742751
  • Filename
    742751