Title :
Transfer of patterned Si and SiO2 layers for the fabrication of patterned and mixed SOI
Author :
Moriceau, Hubert ; Yalicheff, C. ; Gorla, C. ; Charvet, A.-M. ; Morales, C. ; Zussy, M. ; Dechamp, J. ; Kernevez, N. ; Letertre, F. ; Ghyselen, B. ; Mazure, C. ; Lagahe-Blanchard, C. ; Aspar, B.
Author_Institution :
LETI, CEA-DRT, Grenoble, France
Abstract :
To illustrate the challenges and potential of advanced wafer bonding, this paper deals with the boding of silicon wafers, which are patterned and partially oxidized. Two kinds of bonded structures are reported. The buried oxide is patterned in thick and thin regions. The bonded interface can be formed by either Si or SiO2 onto either SiO2 or mixed Si-SiO2 bonding (MSOI structures). In the second case, the pattern of the handle wafer is composed by Si and SiO2 structures onto which a Si layer is transferred. The bonded interface is formed by Si/Si and Si/SiO2 mixed bonding (PSOI) leading to isolated SOI structures.
Keywords :
buried layers; chemical mechanical polishing; elemental semiconductors; oxidation; silicon; silicon compounds; silicon-on-insulator; wafer bonding; Si-SiO2; bonded interface; bonded structures; buried oxide; isolated SOI structures; mixed SOI structures; mixed Si-SiO2 bonding; partial oxidization; patterned SiO2 layer transfer; silicon wafer; silicon-on-insulator; wafer bonding; Application specific processors; Fabrication; Planarization; Rough surfaces; Semiconductor films; Silicon; Smoothing methods; Substrates; Surface roughness; Wafer bonding;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391617
