• DocumentCode
    2517845
  • Title

    New insights on the hot-carrier characteristics of 55 nm PD SOI MOSFETs

  • Author

    Ioannou, Dimitris P. ; Zhao, E. ; Cooper, S. ; Zhang, J. ; Jayanarayanan, S.K. ; Pham, V. ; Marathe, A. ; Ioannou, Dimitris E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    We report hot-carrier degradation results for a 90 nm technology (Lpoly = 55 nm) partially depleted (PD) SOI MOSFETs with electrical gate oxide thickness (Inversion mode) down to 19.5 Å. In addition, this work investigates the effect of time dependent dielectric breakdown (TDDB) pre-stressing on the hot carrier behavior of these devices.
  • Keywords
    MOSFET; elemental semiconductors; hot carriers; semiconductor device breakdown; silicon-on-insulator; 55 nm; 90 nm; Si; TDDB; electrical gate oxide thickness; hot carrier degradation; metal-oxide semiconductor field effect transistor; partially depleted SOI MOSFET; silicon-on-insulator; time dependent dielectric breakdown prestressing; Dielectric breakdown; Hot carriers; Human computer interaction; MOS devices; MOSFETs; Random access memory; Temperature dependence; Thermal conductivity; Thermal degradation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391618
  • Filename
    1391618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517845