Author :
Sadaka, Marjam ; Thean, A.V.-Y. ; Barr, A. ; Tekleab, D. ; Kalpat, S. ; White, T. ; Nguyen, T. ; Mora, R. ; Beckage, P. ; Jawarani, D. ; Zollner, S. ; Kottke, M. ; Liu, R. ; Canonico, M. ; Xie, Q.-H. ; Wang, X.-D. ; Parsons, S. ; Eades, D. ; Zavala, M. ;
Author_Institution :
Technol. Solution Organ., Freescale Semicond. Inc., Austin, TX, USA
Abstract :
First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with TSOI<45 nm exhibited superior short-channel control and comparable reliability to SOI devices. A 67% Gm enhancement was observed in long-channel nMOS SGOI devices, 18% drive current increase for short-channel SGOI devices, and 12% faster ring-oscillators were exhibited with respect to control SOI devices. Functional SRAM bit cells down to Vdd=0.9 V were also demonstrated.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; SRAM chips; elemental semiconductors; nanotechnology; silicon-on-insulator; 0.9 V; 45 nm; 50 nm; CMOS devices; CMOSFET; Gm enhancement; SGOI substrate; SOI devices; SiGe-Si; drive current; functional SRAM bit cell; ring oscillators; strained Si on SiGe insulator; sub-50 nm strained-Si layer; superior short channel control; Bonding; CMOSFETs; Contact resistance; Degradation; Fabrication; Insulation; MOS devices; Random access memory; Silicides; Stress;
