Re-examination of the hot-carrier transport model using spherical harmonic expansion of the Boltzmann transport equation

Author

Ting-Wei Tang ; Haitao Gan ; Meikei Ieong

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

fYear

1998

fDate

19-21 Oct. 1998

Firstpage

238

Lastpage

241

Abstract

The transport coefficients /spl mu/, /spl mu//sub /spl epsi//, D and D/sub /spl epsi// are extracted from the spherical harmonic expansion (SHE) of the electron distribution function. The truncation effect of the higher-order term in the SHE on these transport coefficients is studied. The Einstein relation is also examined for hot-carrier transport. Comparison with Monte Carlo (MC) data shows that the modeling of /spl mu/, /spl mu//sub /spl epsi//, D//spl mu/ and D/sub /spl epsi////spl mu//spl epsi/ in terms of local variables N/sub d/ and W alone may not be sufficient.

Keywords

Boltzmann equation; carrier mobility; electron density; hot carriers; semiconductors; Boltzmann transport equation; Einstein relation; electron distribution function; higher-order term; hot-carrier transport model; local variables; spherical harmonic expansion; transport coefficients; truncation effect; Boltzmann equation; Current density; Distribution functions; Electrons; Gallium nitride; Hot carriers; Integral equations; Monte Carlo methods; Neodymium; Polynomials;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on

Conference_Location

Osaka, Japan

Print_ISBN

0-7803-4369-7

Type

conf

DOI

10.1109/IWCE.1998.742755

Filename

742755