Title :
Effect of Dispersed SiC Nano-particles in Eutectic Sn58Bi Solder Micro-Bumps of Wafer Level Package by Electroplating
Author :
Shin, Yue-Seon ; Lee, Se-hyung ; Lee, Chang-Woo ; Jung, Seung-Boo ; Kim, Jeong-Han
Author_Institution :
Micro-joining Center, Korea Inst. of Ind. Technol., South Korea
Abstract :
In this paper, the effect of SiC nano-particles in micro-solder bump was investigated. SiC nano-particles were dispersed by using ultrasonic homogenizer in plating solution of eutectic Sn58Bi solder and codeposited in eutectic Sn58Bi solder bumps. Solder bumps were fabricated on patterned wafer. Prepared samples were aged for 100, 256 and 400 hrs at 100°C respectively, and then the observation of microstructure and shear test were carried out to examine SiC particles effects. There was little effect on the growth of intermetallic compound (IMC) between solder bumps and Cu pad; however, microstructure became fine and the value of shear strength increase as much value as 13% due to the suppression of grain coarsening by SiC particles.
Keywords :
ageing; bismuth alloys; crystal microstructure; electronics packaging; electroplating; nanoparticles; nanotechnology; shear strength; silicon compounds; solders; tin alloys; SiC-SnBi; codeposition; dispersed nanoparticles; electroplating; eutectic solder microbumps; grain coarsening; intermetallic compound; microstructure; plating solution; shear strength; shear test; temperature 100 degC; time 100 hr to 400 hr; ultrasonic homogenizer; wafer level package; Components, packaging, and manufacturing technology; Dispersion; Electronic packaging thermal management; Environmentally friendly manufacturing techniques; Flip chip; Lead; Plasma temperature; Silicon carbide; Surface resistance; Wafer scale integration;
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
DOI :
10.1109/EPTC.2008.4763448
