Title :
Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation
Author :
Vasileska, D. ; Gross, W.J. ; Ferry, D.K.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
The authors present simulation results for the subthreshold characteristics of n-channel MOSFETs with 0.1 /spl mu/m gate-length and 0.05 /spl mu/m gate-width obtained with our 3D-DD simulator. We also presented a new method that one can successfully use in a particle-based simulator to properly account for the short-range portions of the e-e and e-i interactions without double-counting the long-range portions of these two interaction terms.
Keywords :
MOSFET; capacitance; impurity scattering; impurity states; semiconductor device models; 0.05 mum; 0.1 mum; 3D-DD simulator; deep-submicrometer MOSFETs; e-e interactions; e-i interactions; gate capacitance attenuation; gate-length; gate-width; modelling; n-channel MOSFETs; particle-based simulator; random impurity effects; simulation; subthreshold characteristics; threshold voltage shifts; Attenuation; Capacitance; Doping; Fluctuations; Hydrodynamics; Impurities; Large scale integration; Logic gates; MOSFETs; Threshold voltage;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742760
