DocumentCode
2518040
Title
Efficient 3D ´atomistic´ simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs
Author
Asenov, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
263
Lastpage
266
Abstract
A 3D ´atomistic´ simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 /spl mu/m MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson´s equation, followed by the solution of a simplified current continuity equation are used in the simulations.
Keywords
MOSFET; Poisson equation; fluctuations; impurity states; semiconductor device models; 0.1 mum; 3D atomistic simulation; Poisson equation; algorithms; decanano MOSFETs; fluctuations; random dopant induced threshold voltage lowering; random impurity effects; simplified current continuity equation; statistical analysis; Analytical models; Computational modeling; Doping; Fluctuations; Impurities; Low voltage; MOSFETs; Microscopy; Poisson equations; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742761
Filename
742761
Link To Document