Title :
Simulation analysis of impurity profile extraction by SCM
Author :
Matsuzawa, K. ; Oowaki, Y. ; Nakamura, Mitsutoshi ; Aoki, N. ; Mizushima, I.
Author_Institution :
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Yokohama, Japan
Abstract :
We investigate the propriety of SCM (scanning capacitance microscopy) for determination of impurity distribution of MOSFETs. Two-dimensional impurity distribution is converted from /spl Delta/C//spl Delta/V signal obtained by SCM. It is revealed that the SCM signal is quite sensitive to the effects of charge depletion around the pn junction, singularity of structure in vicinity of SiO/sub 2//Si interface (edge effect), and the work function of the gate electrode. Making use of process/device simulations to analyze these effects, it is found that the SCM signal near the channel surface region of the Si substrate contains large error due to the edge effects. The lateral extent of the source/drain region obtained by SCM shows reasonable agreement with that determined by measurements and simulations of electrical characteristics of the MOSFET.
Keywords :
MOSFET; capacitance; elemental semiconductors; impurity distribution; scanning probe microscopy; semiconductor device measurement; semiconductor device models; silicon; silicon compounds; work function; MOSFET; SCM; Si-SiO/sub 2/; SiO/sub 2//Si interface; channel surface region; charge depletion; edge effect; gate electrode; impurity distribution; impurity profile extraction; pn junction; process/device simulations; scanning capacitance microscopy; simulation analysis; source/drain region; two-dimensional impurity distribution; work function; Analytical models; Capacitance; Electric variables; Electric variables measurement; Electrodes; Impurities; MOSFETs; Microscopy; Signal analysis; Signal processing;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742762
