Title :
Inverse modeling of poly-silicon in MOSFETs using quantum mechanical models
Author :
Kumashiro, S. ; Yokota, I.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
In this paper, Schrodinger equations for both electrons and holes both in the gate poly-Si and silicon substrate were solved to reproduce the full C-V characteristics of the poly-Si gate MOS structure.
Keywords :
MOSFET; Schrodinger equation; capacitance; elemental semiconductors; semiconductor device models; silicon; silicon compounds; C-V characteristics; MOSFETs; Schrodinger equations; Si-SiO/sub 2/; electrons; gate poly-Si; holes; inverse modeling; poly-Si gate MOS structure; poly-silicon; quantum mechanical models; silicon substrate; Capacitance-voltage characteristics; Carrier confinement; Doping; Electrons; Inverse problems; MOSFET circuits; National electric code; Neodymium; Quantization; Quantum mechanics;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742763
