Title :
Temperature characteristics of the red Resonant Cavity light emitting diodes
Author :
Xuan, Ya ; Jianjun, Li ; Rui, Chen ; Yixin, Chen ; Deshu, Zou ; GuangDi, Shen
Author_Institution :
Key Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China
Abstract :
In this paper, InGaP/AlGaInP 640nm Resonant-Cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved and compared them with 630nm InGaP/AlGaInP red light-emitting diodes which don´t include the top and bottom DBRs. We mainly focus on the temperature characteristics of these two kinds of devices as operation temperature increasing. When the operation temperature increases from 10□ to 47.5□, the optical and electrical characteristics variations of RCLEDs at 20mA is changed more subtly. The red shift of RCLEDs is 2nm, while the red LEDs´ is 4nm. The light efficiency degrades less severely. According to the experimental results, we confirm that the temperature characteristics of RCLEDs are more insensitive. In order to interpret the temperature dependent experimental results, theoretical analysis is further carried to investigate the physical mechanism.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium compounds; indium compounds; light emitting diodes; optical resonators; spectral line shift; thermo-optical devices; InGaP-AlGaInP; LED; current 20 mA; electrical properties; light efficiency; optical properties; red resonant cavity light emitting diodes; red shift; temperature characteristics; wavelength 640 nm; Cavity resonators; Distributed Bragg reflectors; Light emitting diodes; Plasma temperature; Reflectivity; Temperature; Vertical cavity surface emitting lasers; Light-emitting diode; resonant cavity; temperature insensitive;
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
DOI :
10.1109/AOM.2010.5713506
