DocumentCode :
2518273
Title :
Semiconductor solid solutions Hg1-xMnxTe -based Schottky diodes for the mid infrared radiation
Author :
Ivanchenko, I.V. ; Godovanyuk, V.M. ; Kovalchuk, M.L. ; Ostapov, S.E. ; Paranchich, S.Yu. ; Popenko, N.A. ; Rarenko, I.M.
Author_Institution :
Usikov Inst. for Radiophys. & Electron., NASU, Kharkov, Ukraine
fYear :
2010
fDate :
26-28 April 2010
Firstpage :
917
Lastpage :
921
Abstract :
The electric and photoelectric parameters of the semiconductor solid solutions Hg1-xMnxTe-based Shottky diodes are presented in this paper. It is showing that the aforementioned diodes are the sensitive ones at lower frequencies of the infrared radiation in comparison with the InSb-based photodiodes and demonstrate the significant improvement of the crystal structure perfection in comparison with the Hg1-xCdxTe-based photodiodes.
Keywords :
Schottky diodes; crystal structure; mercury alloys; photodiodes; photoelectricity; solid solutions; Hg1-xMnxTe; Schottky diodes; crystal structure perfection; mid infrared radiation; photodiodes; photoelectric parameters; semiconductor solid solutions; Crystals; Infrared detectors; Mercury (metals); Photodiodes; Radiation detectors; Schottky diodes; Semiconductor diodes; Semiconductor radiation detectors; Solids; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location :
Valletta
Print_ISBN :
978-1-4244-5793-9
Type :
conf
DOI :
10.1109/MELCON.2010.5475931
Filename :
5475931
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2518273
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