Correlations between green luminescence efficiency, intrinsic defects and co-doping Cl and S in ZnO phosphors

Author

Xiao, Yongneng ; Sun, Huiqing ; Xu, Yi ; Han, Shiyang

Author_Institution

Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China

fYear

2010

fDate

3-6 Dec. 2010

Firstpage

1

Lastpage

5

Abstract

First-principles pseudo-potential approach on complete zinc oxide (ZnO), vacant O (ZnO:V_o), vacant Zn (ZnO:V_Zn), interstitial Zn (ZnO:Zn_i), chloride (Cl) and sulfur (S) co-doped defective ZnO (ZnO:ClSV_Zn, ZnO:ClSZn_i) reveal that V_o is a shallow donor dopant which has nothing to do with green emission. V_Zn and Zn_i both induce green emission recombination levels in the gap. When Cl and S co-dope in defective ZnO, they will enhance the green emission luminescence intensity, because they can promote the formations of V_Zn and Zn_i defects.

Keywords

II-VI semiconductors; ab initio calculations; chlorine; electron-hole recombination; interstitials; optical materials; phosphors; photoluminescence; pseudopotential methods; semiconductor doping; sulphur; vacancies (crystal); wide band gap semiconductors; zinc compounds; ZnO:Cl,S; codoping; crystal defect; first-principle pseudopotential method; green emission recombination; green luminescence efficiency; interstitials; intrinsic defects; phosphors; vacancies; zinc oxide; Absorption; Crystals; Green products; Luminescence; Phosphors; Zinc oxide; ZnO; defects; first-principles; green emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

Conference_Location

Guangzhou

Print_ISBN

978-1-4244-8393-8

Electronic_ISBN

978-1-4244-8392-1

Type

conf

DOI

10.1109/AOM.2010.5713523

Filename

5713523