Title :
Polarization effect´s impact on luminous efficiency in InGaN/AlGaN MQWs LED
Author :
Yi, Xu ; Hui-Qing, Sun ; Yong-Neng, Xiao ; Shi-Yang, Han ; Fu, Ke
Author_Institution :
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
Abstract :
Polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I-V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; piezoelectricity; semiconductor quantum wells; APSYS module; I-V curve; InGaN-AlGaN; MQW LED; carrier distribution; energy band; injection current; internal efficiency; luminous efficiency; output power; piezoelectric polarization effect; radiative recombination rate; Aluminum gallium nitride; Gallium nitride; Light emitting diodes; Materials; Power generation; Quantum well devices; Radiative recombination; InGaN/AlGaN MQWs; electron concentration; polarization; polarization charge;
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
DOI :
10.1109/AOM.2010.5713524
