Analysis of latchup-induced photoemission

Author

Aoki, Takahiro ; Yoshii, Akira

Author_Institution

NTT, Kanagawa, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

281

Lastpage

284

Abstract

Latchup-induced photoemission from CMOS devices is studied in comparison with photoemission from hot carriers. Experiments showed that they are essentially different in spectrum characteristics. By making good use of this difference, the latchup site can be identified with high resolution. An effective method for detecting latchup sites is demonstrated involving the comparison of the photoemission patterns using bandpass interference filters that are either transparent or not transparent to the latchup photoemission. In addition, the photoemission mechanism from latchup, which is a phonon-assisted electron-hole recombination, is clarified.<>

Keywords

CMOS integrated circuits; electron-hole recombination; integrated circuit testing; light emitting devices; photoemission; CMOS devices; bandpass interference filters; detecting latchup sites; high resolution; latchup site; latchup-induced photoemission; light emission; phonon-assisted electron-hole recombination; photoemission mechanism from latchup; photoemission patterns; spectrum characteristics; Band pass filters; Electron emission; Image intensifiers; Optical filters; Optical microscopy; Photoelectricity; Photonic integrated circuits; Spontaneous emission; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74279

Filename

74279