DocumentCode :
2518570
Title :
The effects of different coverage of Nitrogen adsorbed on wurtzite ZnO(0001) surface
Author :
Cao, Dong-Xing ; Guo, Zhi-You ; Gao, Xiao-Qi ; Zhang, Yu-Fei ; Ye, Guo-Guang
Author_Institution :
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
fYear :
2010
fDate :
3-6 Dec. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The adsorption of nitrogen on wurtzite ZnO (0001) surface were studied by First-principles. Different adsorption sites and the effect of different coverages have been considered. The clean ZnO (0001) surface and different coverages of Nitrogen adsorbed on wurtzite ZnO(0001) surface show n-type conduction. We found that the H3 adsorption site is energy-favored in each coverage considered, and that 0.25 and 0.5ML N adsorption leads to an indirect band gap semiconducting surface. Analyzing the electronic structures and the density of states of the adsorbed systems, we proposed that the strong hybridization between the Zn-3d and N-2p results in the consequent saturation of Zn dangling bonds and the formation of a polarized covalent Zn-N bonding. Our study may be able to provide a guidance for the growth of N-doped ZnO.
Keywords :
II-VI semiconductors; ab initio calculations; adsorption; dangling bonds; electrical conductivity; electronic density of states; energy gap; nitrogen; optical materials; semiconductor doping; surface states; wide band gap semiconductors; zinc compounds; N2; ZnO; adsorption; dangling bonds; density of states; doping; electronic structure; first-principle method; indirect band gap semiconducting surface; n-type conduction; nitrogen; wurtzite structure; Crystals; Nitrogen; Photonic band gap; Surface cleaning; Zinc oxide; ZnO (0001) surface; adsorption energy; electronic structure; nitrogen adsorption;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
Type :
conf
DOI :
10.1109/AOM.2010.5713528
Filename :
5713528
Link To Document :
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