DocumentCode
2518608
Title
First-principle study of GaN polar and nonpolar surfaces
Author
Zhao, Hong-Tao ; Guo, Zhi-You ; Zhao, Hua-Xiong ; Zhang, Yu-Fei
Author_Institution
Inst. of Optoelectron. Mater. & Technol., South China Normal Univ., Guangzhou, China
fYear
2010
fDate
3-6 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
The polarity of GaN surface may have a substantial influence on its electronic structure, So the (0001) and (112̅0) surfaces and their electronic structures are studied based on density-functional theory using the local-density approximation (LDA) as well as the hybrid functional approach were studied by First-principles study. It presents the change of surface atoms position and analyses the surface electronic structure. Also the obvious relaxation appears which effects the electric field polarization direction a lot, that is the reason why our chip grown along (112̅0) surface has better property. The band gap of GaN (0001) surface is obviously narrower than that of GaN (112̅0), leading to the luminescence spectra shift red also.
Keywords
III-V semiconductors; ab initio calculations; density functional theory; energy gap; gallium compounds; photoluminescence; red shift; surface states; wide band gap semiconductors; GaN; band gap; density-functional theory; electric field polarization; first-principle study; hybrid functional approach; local-density approximation; luminescence spectra; nonpolar surfaces; polar surfaces; red shift; surface atom position; surface electronic structure; Atomic layer deposition; Electric fields; Gallium; Gallium nitride; Optical surface waves; Optimization; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location
Guangzhou
Print_ISBN
978-1-4244-8393-8
Electronic_ISBN
978-1-4244-8392-1
Type
conf
DOI
10.1109/AOM.2010.5713530
Filename
5713530
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