DocumentCode :
2518608
Title :
First-principle study of GaN polar and nonpolar surfaces
Author :
Zhao, Hong-Tao ; Guo, Zhi-You ; Zhao, Hua-Xiong ; Zhang, Yu-Fei
Author_Institution :
Inst. of Optoelectron. Mater. & Technol., South China Normal Univ., Guangzhou, China
fYear :
2010
fDate :
3-6 Dec. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The polarity of GaN surface may have a substantial influence on its electronic structure, So the (0001) and (112̅0) surfaces and their electronic structures are studied based on density-functional theory using the local-density approximation (LDA) as well as the hybrid functional approach were studied by First-principles study. It presents the change of surface atoms position and analyses the surface electronic structure. Also the obvious relaxation appears which effects the electric field polarization direction a lot, that is the reason why our chip grown along (112̅0) surface has better property. The band gap of GaN (0001) surface is obviously narrower than that of GaN (112̅0), leading to the luminescence spectra shift red also.
Keywords :
III-V semiconductors; ab initio calculations; density functional theory; energy gap; gallium compounds; photoluminescence; red shift; surface states; wide band gap semiconductors; GaN; band gap; density-functional theory; electric field polarization; first-principle study; hybrid functional approach; local-density approximation; luminescence spectra; nonpolar surfaces; polar surfaces; red shift; surface atom position; surface electronic structure; Atomic layer deposition; Electric fields; Gallium; Gallium nitride; Optical surface waves; Optimization; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
Type :
conf
DOI :
10.1109/AOM.2010.5713530
Filename :
5713530
Link To Document :
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