DocumentCode :
2518620
Title :
Microstructural Transformation on SnAgCu/Cu Interface Induced by Thermal-shearing Cycling
Author :
Qi, Lihua ; Huang, Jihua ; Zhao, Xingke ; Zhang, Hua
Author_Institution :
Sch. of Mater. Sci. & Technol., Univ. of Sci. & Technol. Beijing, Beijing, China
fYear :
2008
fDate :
9-12 Dec. 2008
Firstpage :
499
Lastpage :
505
Abstract :
The changes of morphology and growth tropism of inter-metallic compound (IMC) and IMC growth rate at lead-free solders/Cu interface of solder joints often limit the reliability of the entire package during service. Furthermore, during thermal-shearing cycling process, the thickness of IMC at the interface grows significantly and growth tropism of IMC changes, resulting in in-service evolution of the fatigue behavior. In this paper, the growth mechanism and tropism Of Cu6Sn5 at Sn3.5Ag0.5Cu/Cu interface are studied. It can be found that the results are correlated with shear stress-strain from the solder subjected to thermal-shearing cycling conditions. The average diffusion coefficient of IMC is from 10-5 ¿m2/s to 10-4 ¿m2/s. The IMC growth follows parabola growth kinetics, implying that the IMC growth is controlled by atomic diffusion.
Keywords :
chemical interdiffusion; copper; copper alloys; heat treatment; interface structure; silver alloys; solders; solid-state phase transformations; stress-strain relations; tin alloys; SnAgCu-Cu; atomic diffusion; diffusion coefficient; growth tropism; inter-metallic compound; microstructural transformation; morphology; parabola growth kinetics; shear stress-strain; solder; thermal-shearing cycling; Aging; Copper; Environmentally friendly manufacturing techniques; Materials science and technology; Microstructure; Soldering; Temperature; Thermal expansion; Thermal stresses; Tungsten; diffusion coefficient; growth tropism; inter-metallic compound (IMC); thermal-shearing cycling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
Type :
conf
DOI :
10.1109/EPTC.2008.4763483
Filename :
4763483
Link To Document :
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