Optimization growth of P-type GaAs nanowires by metal-organic chemical vapor deposition

Author

Li, Ran ; Huang, Hui ; Ren, Xiaomin ; Guo, Jingwei ; Liu, Xiaolong ; Yongqing Huang ; Cai, Shiwei

Author_Institution

Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China

fYear

2010

fDate

3-6 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>;9.1%), there exists a critical length, beyond which the kinking takes place. Two possible reasons were discussed.Zn occurrence into the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III=0.2%, the doping concentration is about 8×10¹⁸.

Keywords

III-V semiconductors; MOCVD; X-ray chemical analysis; gallium arsenide; kink bands; nanowires; semiconductor doping; semiconductor growth; semiconductor quantum wires; EDX; GaAs; energy dispersive X-ray analysis; kinking; metal-organic chemical vapor deposition; optimization growth; p-type doping; p-type nanowires; pure zinc blende structure; vapor-liquid-solid mechanism; Atomic measurements; Crystals; Doping; Gallium arsenide; Nanowires; Substrates; Zinc; GaAs nanowire; metal organic chemical vapor position; p-type doping; zinc-blende structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

Conference_Location

Guangzhou

Print_ISBN

978-1-4244-8393-8

Electronic_ISBN

978-1-4244-8392-1

Type

conf

DOI

10.1109/AOM.2010.5713532

Filename

5713532