Growth of Au-assisted GaAs/AlGaAs core-shell nanowires by metalorganic chemical vapor deposition

Author

Guo, Jingwei ; Huang, Hui ; Yan, Xin ; Li, Ran ; Liu, Minjia ; Ren, Xiaomin ; Cai, Shiwei ; Wang, Wei ; Huang, Yongqing ; Wang, Qi ; Zhang, Xia

Author_Institution

Key Lab. of Inf. Photonics & Opt. Commun. Minist. of Educ., Beijing Univ. of Posts & Telecommun., Beijing, China

fYear

2010

fDate

3-6 Dec. 2010

Firstpage

1

Lastpage

3

Abstract

Growth and characterization of GaAs/AlGaAs core-shell nanowires (NWs) are reported. Using the VLS (vapor-liquid-solid) mechanism, GaAs NWs oriented perpendicularly to the substrate were grown on GaAs (111) B substrate. Using the metalorganic chemical vapor deposition (MOCVD) growth mode, AlGaAs shells were grown on GaAs NWs sidewalls. Single crystal and pure zinc-blende structure are achieved for GaAs NWs. It is founded that the zinc-blende phase is also the dominant phase for GaAs/AlGaAs core-shell NWs with some defects. This study on GaAs/AlGaAs core-shell NWs has many potential applications for nano-electronic and nano-optoelectronic devices.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; nanofabrication; nanowires; semiconductor growth; Au-GaAs; GaAs (111) B substrate; GaAs-AlGaAs; MOCVD; core-shell nanowire growth; crystal defects; metalorganic chemical vapor deposition; pure zinc-blende structure; single crystal structure; vapor-liquid-solid mechanism; zinc-blende phase; Gallium arsenide; Gold; Image segmentation; Nanoscale devices; Nanowires; Scanning electron microscopy; Substrates; VLS; core-shell; heterosturcture; nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

Conference_Location

Guangzhou

Print_ISBN

978-1-4244-8393-8

Electronic_ISBN

978-1-4244-8392-1

Type

conf

DOI

10.1109/AOM.2010.5713534

Filename

5713534