Title :
25.2%-efficiency (1-Sun, air mass 0) AlGaAs/GaAs/InGaAsP three-junction, two-terminal solar cell
Author :
Chung, B.C. ; Virshup, G.F. ; Klausmeier-Brown, M. ; Ristow, M. Ladle ; Wanlass, M.W.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A 25.2% efficiency measured under 1-Sun, air mass 0 illumination has been achieved in a two-terminal AlGaAs/GaAs/InGaAsP three-junction solar cell. The cascade cell consists of a monolithic AlGaAs (E g=1.93 eV)/GaAs two-junction mechanically stacked on an InGaAsP (Eg=0.95 eV) single-junction cell. The component cell of the AlGaAs/GaAs two-junction structure were electrically connected using a metal interconnect fabricated during post-growth processing. To minimize the obscuration effect introduced by the grid lines and metal interconnect, a prismatic cover glass was bonded to the AlGaAs/GaAs cascade cell. The results obtained with this structure represent the highest 1-Sun, air mass 0 efficiency achieved to date in any solar cell operating under a two-terminal configuration
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; solar cells; 1-Sun; 25.2 percent; AlGaAs-GaAs-InGaAsP; air mass 0; cascade cell; grid lines; mechanically stacked; metal interconnect; obscuration effect; post-growth processing; prismatic cover glass; three junction solar cell; two-terminal solar cell; Coatings; Current measurement; Density measurement; Epitaxial growth; Gallium arsenide; Glass; Indium gallium arsenide; Lighting; Photovoltaic cells; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169181
