Optical loss of bandgap shifted InGaAsP/InP waveguide using argon plasma-enhanced quantum well intermixing

Author

Zhang, Xin ; He, Jian-Jun

Author_Institution

State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China

fYear

2010

fDate

3-6 Dec. 2010

Firstpage

1

Lastpage

2

Abstract

A blue shift of the bandgap 90nm, in an InGaAsP/InP quantum well (QW) structure using argon plasma enhanced quantum well intermixing (QWI) technique is presented. The loss coefficient at the original band-edge was reduced from 373dB/cm to 68dB/cm, which is acceptable and utilizable for photonic integrated circuit application.

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical losses; optical waveguides; semiconductor quantum wells; spectral line shift; sputter etching; wide band gap semiconductors; InGaAsP-InP; argon plasma-enhanced quantum well intermixing; bandgap shifted waveguide; blue shift; etch-stop layer; optical loss; photonic integrated circuit; quantum well structure; Argon; Indium phosphide; Loss measurement; Optical waveguides; Photonic band gap; Plasmas; Rapid thermal annealing; Optical waveguides; Quantum well intermixing (QWI); Semiconductor quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

Conference_Location

Guangzhou

Print_ISBN

978-1-4244-8393-8

Electronic_ISBN

978-1-4244-8392-1

Type

conf

DOI

10.1109/AOM.2010.5713541

Filename

5713541