• DocumentCode
    2518831
  • Title

    Localized modes on ZnO nanorods random media

  • Author

    You, Qiao-qin ; Li, Bing-xiang ; Xie, Ying-mao

  • Author_Institution
    Sch. of Phys. & Electron. Inf., Gannan Normal Univ., Ganzhou, China
  • fYear
    2010
  • fDate
    3-6 Dec. 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Based on the growth and photoluminescence experiment of ZnO nanorods, the structure model of two-dimensional random media in which the center and radius of ZnO nanorods are all disordered is constructed. Using ZnO gain phenomenological model, the spectrum characteristics and spatial distribution of optical field in ZnO nanorods random media is simulated numerically by means of the finite difference time domain method, the localized mode is found. Firstly using Gaussian pulse in ZnO two-dimensional random media, five typical resonance peaks of observation point occur in ZnO gain range, the spatial distribution of optical field presents localization characteristics in the random media is found. Then using sinusoidal wave instead of Gaussian pulse, The optical field corresponding to the resonance peaks is discussed. We found the optical field of different localized mode has different spatial distribution.
  • Keywords
    II-VI semiconductors; finite difference time-domain analysis; localised modes; nanorods; photoluminescence; random media; semiconductor growth; wide band gap semiconductors; zinc compounds; Gaussian pulse; ZnO; finite difference time domain method; gain phenomenological model; localized modes; nanorod random media; optical field spatial distribution; photoluminescence; sinusoidal wave; structural model; two-dimensional random media; Numerical models; Optical feedback; Optical films; Optical pulses; Optical scattering; Random media; Zinc oxide; localized modes; random media; spectrum characteristics; stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4244-8393-8
  • Electronic_ISBN
    978-1-4244-8392-1
  • Type

    conf

  • DOI
    10.1109/AOM.2010.5713542
  • Filename
    5713542