Title :
Localized modes on ZnO nanorods random media
Author :
You, Qiao-qin ; Li, Bing-xiang ; Xie, Ying-mao
Author_Institution :
Sch. of Phys. & Electron. Inf., Gannan Normal Univ., Ganzhou, China
Abstract :
Based on the growth and photoluminescence experiment of ZnO nanorods, the structure model of two-dimensional random media in which the center and radius of ZnO nanorods are all disordered is constructed. Using ZnO gain phenomenological model, the spectrum characteristics and spatial distribution of optical field in ZnO nanorods random media is simulated numerically by means of the finite difference time domain method, the localized mode is found. Firstly using Gaussian pulse in ZnO two-dimensional random media, five typical resonance peaks of observation point occur in ZnO gain range, the spatial distribution of optical field presents localization characteristics in the random media is found. Then using sinusoidal wave instead of Gaussian pulse, The optical field corresponding to the resonance peaks is discussed. We found the optical field of different localized mode has different spatial distribution.
Keywords :
II-VI semiconductors; finite difference time-domain analysis; localised modes; nanorods; photoluminescence; random media; semiconductor growth; wide band gap semiconductors; zinc compounds; Gaussian pulse; ZnO; finite difference time domain method; gain phenomenological model; localized modes; nanorod random media; optical field spatial distribution; photoluminescence; sinusoidal wave; structural model; two-dimensional random media; Numerical models; Optical feedback; Optical films; Optical pulses; Optical scattering; Random media; Zinc oxide; localized modes; random media; spectrum characteristics; stimulated emission;
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
DOI :
10.1109/AOM.2010.5713542