DocumentCode
2518849
Title
High-power violet light emitting diodes with electroplating copper heat spreader
Author
Li, Rui ; Fan, Guang-han ; Zhang, Yong ; Chen, Xian-wen
Author_Institution
Inst. of Optoelectron. Mater. & Technol., South China Normal Univ., Guangzhou, China
fYear
2010
fDate
3-6 Dec. 2010
Firstpage
1
Lastpage
5
Abstract
Using self-alignment photolithography and copper electroforming techniques, we have developed a size of 1mm×1mm high power GaN-based violet LED embedded in a reflective cup-shaped copper heat spreader. The packaged LED chip sample with copper heat spreader driven at 1 A current yield the light output power of 310 mW, about 1.55 times to the conventional LED. Moreover, the power efficiency is remarkably increased from 4.21% to 6.61% at the same driven current. These results indicate that the novel heat dissipation, a direct Cu heat spreader by a metal connection to the device, did efficiently extract the heat from the chip. The result exhibit a new solution to thermal management of high power GaN-based violet LED samples.
Keywords
III-V semiconductors; cooling; copper; electroforming; electroplating; gallium compounds; light emitting diodes; optical fabrication; photolithography; self-assembly; wide band gap semiconductors; Cu; GaN; copper electroforming; current 1 A; heat dissipation; high-power violet light emitting diodes; power 310 mW; power efficiency; reflective cup-shaped copper heat spreader; self-alignment photolithography; size 1 mm; Copper; Heat sinks; Heating; Light emitting diodes; Power generation; Surface treatment; Thermal conductivity; Violet LED; electroplating copper; self-alignment photolithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location
Guangzhou
Print_ISBN
978-1-4244-8393-8
Electronic_ISBN
978-1-4244-8392-1
Type
conf
DOI
10.1109/AOM.2010.5713543
Filename
5713543
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