Title :
A critical comparison of several high-efficiency, monolithic, multijunction solar cells for space and terrestrial applications
Author :
Klausmeier-Brown, M.E. ; Partain, L.D. ; Werthen, J.G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
Results are given of detailed numerical simulations of several multijunction systems as a function of temperature and solar concentration. Only two-terminal (current-matched) operation was considered. Of the systems considered, the AlGaAs/GaAs/InGaAs combination offers the highest available frequency-over 34% under 100×, AM0 conditions
Keywords :
III-V semiconductors; gallium arsenide; solar cells; AlGaAs-GaAs; AlGaAs-GaAs-Ge; AlGaAs-GaAs-InGaAs; GaAs-Ge; current-matched operation; high-efficiency; monolithic solar cells; multijunction solar cells; numerical simulations; space applications; terrestrial applications; two-terminal operation; Computer simulation; Contact resistance; Fabrication; Gallium arsenide; Indium gallium arsenide; Numerical simulation; Photonic band gap; Photovoltaic cells; Sun; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169182
