DocumentCode :
2518877
Title :
Electron transport features in two-barrier resonant-tunneling Si/CaF2 structures
Author :
Baranov, A.V. ; Velichko, A.A. ; Ilushin, V.A. ; Philimonova, N.I.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2002
fDate :
23-26 Sept. 2002
Firstpage :
15
Lastpage :
18
Abstract :
Along with superlattices an engineering and practical use of double-barrier resonant-tunneling Si/CaF2 structures is possible. The current-voltage characteristic (CVC) of such structures can have a specific features caused by several mechanisms of electron transport. In this paper we analyse some features of electron transport and CVC of double-barrier resonant-tunneling Si/CaF2 structures.
Keywords :
calcium compounds; elemental semiconductors; quantum wells; resonant tunnelling; semiconductor-insulator boundaries; silicon; Si-CaF2; Si/CaF2 double-barrier resonant tunneling structure; current-voltage characteristics; electron transport; low-dimensional quantum well structure; semiconductor-dielectric interface; Charge carrier processes; Dielectrics; Electron traps; Energy states; Molecular beam epitaxial growth; Nanoelectronics; Resonance; Resonant tunneling devices; Silicon; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2002. APEIE 2002. 2002 6th International Conference on Actual Problems of
Print_ISBN :
0-7803-7361-8
Type :
conf
DOI :
10.1109/APEIE.2002.1075777
Filename :
1075777
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2518877
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