DocumentCode :
2518952
Title :
Role of the additive of oxygen at plasma etching of silicon
Author :
Bogomolov, B.K.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2002
fDate :
23-26 Sept. 2002
Firstpage :
33
Lastpage :
35
Abstract :
Research concerning the process of plasma etching of silicon in a CF2Cl2/O2 plasma using "Plasma-600" equipment is carried out. The shift of the maximum dependence of etching rate in the direction of greater O2 content in an initial mix for a CF2Cl2/O2 chemistry in comparison with CF4/O2 and SF6/O2 plasmas.
Keywords :
elemental semiconductors; oxygen; silicon; sputter etching; CF2Cl2/O2 plasma; O2; O2 content; Plasma-600 equipment; Si; etching rate; plasma etching process; Additives; Atomic layer deposition; Atomic measurements; Chemical technology; Etching; Oxygen; Plasma applications; Plasma chemistry; Plasma materials processing; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2002. APEIE 2002. 2002 6th International Conference on Actual Problems of
Print_ISBN :
0-7803-7361-8
Type :
conf
DOI :
10.1109/APEIE.2002.1075781
Filename :
1075781
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2518952
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