DocumentCode :
2518971
Title :
Electrical characterization of fine-pitch compliant bumps
Author :
Lin, C.K. ; Chen, Chih ; Chang, Shyh-Ming ; An, Chao-Chyun ; Lee, Hsiao Ting ; Kao, Kuo-Shu ; Tsang, Jimmy ; Yang, Sheng-Shu
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu
fYear :
2008
fDate :
9-12 Dec. 2008
Firstpage :
608
Lastpage :
612
Abstract :
The electrical characterization of fine-pitch compliant Au bumps is investigated in this study. Compliant Au bumps of 20 microns pitch were fabricated on a glass substrate for chip-on-glass application. Kelvin probes are fabricated and employed to measure the bump resistance. The resistance ranges from 1.0 to 4.5 ohms, depending on process parameters. Current-carrying capability for these bumps is examined. Electromigration test is performed and it is found that the failure occurs in the wiring A1 line on the glass substrate, indicating that the Au bumps have high electromigration resistance. The bump resistance is also measured during thermal cycling from 30 to 110degC, and the resistance increases less than 50% after 6 cycles. Aging test is also carried out at 60degC and 40 mA, and the failure time is 561 hours.
Keywords :
ageing; aluminium; chip scale packaging; chip-on-board packaging; electric resistance; electric resistance measurement; electromigration; fine-pitch technology; gold; integrated circuit metallisation; integrated circuit reliability; monolithic integrated circuits; Al; Au; Kelvin probes; aging; current 40 mA; electrical characterization; electromigration; fine-pitch compliant bumps; reliability; resistance; resistance 1.0 ohm to 4.5 ohm; temperature 30 degC to 110 degC; thermal cycling; time 561 hour; under bump metallization; Electric resistance; Electrical resistance measurement; Electromigration; Glass; Gold; Kelvin; Probes; Semiconductor device measurement; Testing; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
Type :
conf
DOI :
10.1109/EPTC.2008.4763500
Filename :
4763500
Link To Document :
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