MOS trench gate field-controlled thyristor

Author

Change, H. ; Holroyd, F.W. ; Baliga, B.J. ; Kretchmer, J.W.

Author_Institution

Gen. Electr. Co., Schenectady, NY, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

293

Lastpage

296

Abstract

A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.<>

Keywords

digital simulation; insulated gate field effect transistors; semiconductor device models; thyristors; 2D computer modeling; 3.8 A; FCT; MOS trench gate field-controlled thyristor; MOS trench gates; UMOS; UMOS FCT; device structure; dynamic characteristics; forward conduction characteristic; gate bias; high current densities; high turn-off current gain; low forward voltage drop; static characteristics; transient turn-off; turn-off capability; turn-off current; Anodes; Cathodes; Computational modeling; Control systems; Current density; Insulated gate bipolar transistors; Low voltage; P-i-n diodes; Research and development; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74282

Filename

74282