Title :
The design and evaluation of dual-junction GaInP2/GaAs solar cells for space applications
Author :
Cavicchi, B.T. ; Krut, D.D. ; Lillington, D.R. ; Kurtz, S.R. ; Olson, J.M.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
The necessary design considerations for a space-qualified GaInP 2/GaAs cell are addressed. Analyses are presented which indicate that, with the proper active layer thicknesses and doping levels, BOL efficiencies of 27% (AM0, 28 C) can be achieved from a cell with 84% remaining power at EOL ( 1×1015 e/cm2 ). Experimental data from 1 MeV electron irradiation of terrestrial GaInP2/GaAs tandem cells which are in support of these predictions are presented. The results indicate that the thin GaInP2 top cell degrades less than 10% and that the GaAs behaves as predicted
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; gallium compounds; solar cells; 27 percent; GaInP-GaAs solar cell; active layer thicknesses; beginning of life; doping levels; duel-junction solar cell; electron irradiation; space applications; terrestrial tandem cells; Degradation; Doping; Gallium arsenide; Inductors; Lattices; MOCVD; Photonic band gap; Photovoltaic cells; Semiconductor process modeling; Temperature sensors;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169183
