• DocumentCode
    2519259
  • Title

    A Viable NDRO FERRAM Dielectric Structure

  • Author

    Lampe, D.R. ; Dzimianski, J.W. ; Adams, D.A. ; Buhay, H. ; Sinharoy, S. ; Francombe, M.H.

  • Author_Institution
    Westinghouse Advanced Technology Division
  • fYear
    1993
  • fDate
    22-24 Jun 1993
  • Firstpage
    43
  • Lastpage
    43
  • Keywords
    Breakdown voltage; Chemical processes; Dielectric breakdown; Dielectric devices; Dielectrics and electrical insulation; FETs; Ferroelectric films; Ferroelectric materials; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonvolatile Memory Technology Review, 1993
  • Print_ISBN
    0-7803-1290-2
  • Type

    conf

  • DOI
    10.1109/NVMT.1993.696947
  • Filename
    696947