DocumentCode :
2519259
Title :
A Viable NDRO FERRAM Dielectric Structure
Author :
Lampe, D.R. ; Dzimianski, J.W. ; Adams, D.A. ; Buhay, H. ; Sinharoy, S. ; Francombe, M.H.
Author_Institution :
Westinghouse Advanced Technology Division
fYear :
1993
fDate :
22-24 Jun 1993
Firstpage :
43
Lastpage :
43
Keywords :
Breakdown voltage; Chemical processes; Dielectric breakdown; Dielectric devices; Dielectrics and electrical insulation; FETs; Ferroelectric films; Ferroelectric materials; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonvolatile Memory Technology Review, 1993
Print_ISBN :
0-7803-1290-2
Type :
conf
DOI :
10.1109/NVMT.1993.696947
Filename :
696947
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2519259
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