Title :
Device line characterization of Gunn diodes using six-port techniques
Author :
Ghannouchi, F.M. ; Bosisio, Renato G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
Abstract :
A device line characterization system using a six-port reflectometer with a built-in impedance tuner is reported. Device line measurements on a Gunn diode mounted in a coaxial fixture were performed at the Ka-band to optimize experimentally the output microwave power in the oscillation mode. In addition to its relatively low cost, an inherent advantage of the instrumentation used is that the large-signal reflection coefficient of negative resistance devices can be measured at the actual power level that exists in practice
Keywords :
Gunn diodes; microwave reflectometry; semiconductor device testing; Gunn diodes; Ka-band; built-in impedance tuner; coaxial fixture; cost; device line characterization; large-signal reflection coefficient; negative resistance devices; oscillation mode; output microwave power; six-port reflectometer; Coaxial components; Diodes; Electrical resistance measurement; Fixtures; Gunn devices; Impedance; Microwave measurements; Performance evaluation; Power measurement; Tuners;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1993. IMTC/93. Conference Record., IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-1229-5
DOI :
10.1109/IMTC.1993.382627