Title :
PSP based DCG-FGT transistor Model: Full characterization procedure
Author :
Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.
Author_Institution :
ST-Microelectron., Rousset, France
Abstract :
Full characterization of a new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is to provide an accurate and scalable model available in design framework.
Keywords :
circuit simulation; semiconductor device models; transistors; ELDO; ICCAP software; PSP based DCG-FGT transistor model; advanced STMicroelectronics technology; design framework; dual-control-gate floating-gate transistor model; electrical simulator; full characterization procedure; static simulation; transient simulation; Capacitance; Current measurement; Integrated circuit modeling; Logic gates; Noise; Nonvolatile memory; Transistors; DCG-FGT transistor; Modeling; calibration model; characterization;
Conference_Titel :
Communications and Information Technologies (ISCIT), 2012 International Symposium on
Conference_Location :
Gold Coast, QLD
Print_ISBN :
978-1-4673-1156-4
Electronic_ISBN :
978-1-4673-1155-7
DOI :
10.1109/ISCIT.2012.6380895
