DocumentCode
2519381
Title
Class-D power amplifiers using LDMOS and GaN power devices: a comparative analysis
Author
Chevaux, Nicolas ; De Souza, Maria Merlyne
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2010
fDate
26-28 April 2010
Firstpage
691
Lastpage
694
Abstract
This paper provides new analytical expressions for the prediction of efficiency and power added efficiency in current mode class-D (CMCD) power amplifiers (PAs). Derived from a switch-based model which includes 9 parasitic elements, these expressions are then used to compare two device technologies in silicon and GaN in a 60W, 2.5GHz CMCD PA. This study reveals that the knee voltage and the drain and source resistances are mainly responsible for the lower PAE of the LDMOS device in comparison to GaN.
Keywords
MIS devices; UHF power amplifiers; current-mode circuits; gallium compounds; CMCD power amplifiers; GaN; GaN power devices; LDMOS device; PAE; current mode class-D power amplifiers; drain resitance; frequency 2.5 GHz; knee voltage; power 60 W; power added efficiency; source resistance; Base stations; Circuit topology; Frequency; Gallium nitride; Operational amplifiers; Parasitic capacitance; Power amplifiers; Shape; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location
Valletta
Print_ISBN
978-1-4244-5793-9
Type
conf
DOI
10.1109/MELCON.2010.5475994
Filename
5475994
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