DocumentCode
2519468
Title
Nanostructured materials for sensing and imaging
Author
Zhang, D.H. ; Yan, C.C. ; Chen, X.Z. ; Jin, Y.J. ; Li, D.D. ; Bian, H.J. ; Xu, Z.J. ; Wang, Y.K.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
fDate
3-6 Dec. 2010
Firstpage
1
Lastpage
6
Abstract
From semiconductor quantum well structures to the currently hottest metamaterials, the conquest of nano-world has been occurring in almost every field of research. In the field of quantum well structures for infrared photodetection, the inclusion of dilute nitride layers in the mature GaAs based quantum well structures results in a TE dominate photocurrent and the incorporation of nitrogen in the narrow bandgap InSb materials makes it possible for wide band infrared absorption covering mid and long wavelength infrared range. With the nanostructured materials made of metal and dielectric composites, visible light can be manipulated, which has potential application for super resolution imaging beyond diffraction limit.
Keywords
III-V semiconductors; arsenic compounds; dielectric materials; energy gap; gallium arsenide; indium compounds; infrared detectors; infrared imaging; infrared spectra; metamaterials; nanocomposites; nanophotonics; nanosensors; nanostructured materials; optical materials; optical sensors; photodetectors; semiconductor quantum wells; silicon; GaAs:Si-GaAs-In0.3Ga0.7As0.93N0.01-Si-GaAs-GaAs:Si-GaAs; dielectric composites; imaging; infrared photodetection; metal composites; metamaterials; nanostructured materials; photocurrent; semiconductor quantum well structures; sensing; super resolution imaging; wide band infrared absorption; Absorption; Gallium arsenide; Metamaterials; Nitrogen; Photoconductivity; Silver; imaging; infrared photodetector; nanostructure; sensing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location
Guangzhou
Print_ISBN
978-1-4244-8393-8
Electronic_ISBN
978-1-4244-8392-1
Type
conf
DOI
10.1109/AOM.2010.5713576
Filename
5713576
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