Title :
Specification of the theory of telecommunication system devices on the basis of field effect transistors
Author :
Ignatov, A. ; Fadeeva, N.
Author_Institution :
Siberian State Univ. of Telecommun. & Comput. Sci., Novosibirsk, Russia
Abstract :
Specified here is the theory of functioning of analog devices of telecommunication systems on the basis of field effect transistors (FET), operating in amplifier mode (generators, mixers, power amplifier) and in controlled resistance mode (electronic keys and switchboards, compressors and expanders, dynamic range of levels, auto regulators).
Keywords :
electrical conductivity; field effect transistors; nonlinear distortion; semiconductor device models; FET models; amplifier mode; analog devices; controlled resistance mode; field effect transistors; telecommunication system devices; Cause effect analysis; Computer science; Conductivity; FETs; Harmonic analysis; Harmonic distortion; Mathematical model; Power amplifiers; Power generation; Voltage;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2002. APEIE 2002. 2002 6th International Conference on Actual Problems of
Print_ISBN :
0-7803-7361-8
DOI :
10.1109/APEIE.2002.1075820
