A new band-to-band tunneling model for accurate device simulations of Si MOSFETs

The authors propose a novel model for band-to-band tunneling caused by a nonuniform electric field, which is expressed in terms of the local field and its spatial variation rate and gives tunneling probabilities in magnitude and electric field dependence that are different from those given by conventional models. The proposed model can be incorporated into device simulators, and the results show the reasonable coincidence with experimental findings without any fitting parameter.<>