DocumentCode

2519624

Title

Ferroelectric-CMOS Nonvolatile Memory Development

Author

Nasby, R.D. ; McWhorter, P.J. ; Knoll, M.G.

Author_Institution

Sandia National Laboratories

fYear

1993

fDate

22-24 Jun 1993

Firstpage

48

Lastpage

49

Keywords

Capacitors; Circuit testing; Electrodes; Ferroelectric materials; Iron; Nonvolatile memory; Random access memory; Sputter etching; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonvolatile Memory Technology Review, 1993

Print_ISBN

0-7803-1290-2

Type

conf

DOI

10.1109/NVMT.1993.696949

Filename

696949