DocumentCode :
2519624
Title :
Ferroelectric-CMOS Nonvolatile Memory Development
Author :
Nasby, R.D. ; McWhorter, P.J. ; Knoll, M.G.
Author_Institution :
Sandia National Laboratories
fYear :
1993
fDate :
22-24 Jun 1993
Firstpage :
48
Lastpage :
49
Keywords :
Capacitors; Circuit testing; Electrodes; Ferroelectric materials; Iron; Nonvolatile memory; Random access memory; Sputter etching; Voltage; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonvolatile Memory Technology Review, 1993
Print_ISBN :
0-7803-1290-2
Type :
conf
DOI :
10.1109/NVMT.1993.696949
Filename :
696949
Link To Document :
بازگشت