Title :
A Multi-physics Multi-scale Modeling Platform for Research and Development in Solid State Lighting
Author :
Liu, Sheng ; Wang, Kai ; Gan, Zhiyin ; Liu, Zongyuan ; Chen, Zhaohui ; Yan, Han ; Luo, Xiaobing ; Wei, Wei ; Wang, Pei
Author_Institution :
Sch. of Mech. Sci. & Eng., Huazhong Univ. of Sci. & Technol., Wuhan
Abstract :
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution prediction during a complete MOCVD processing, effect of defects and interface integrity, behaviors of thermal, optical, deformation, and stresses. First principles Molecular dynamics (MD) and finite element method (FEM) have been used in couple to study the scale effect of the material properties and the prediction of the module behaviors. A few examples of applications have been given, including the applications to a few real world lamps such as tunnel lamps, street lamps, and MR16.
Keywords :
MOCVD; elemental semiconductors; finite element analysis; integrated circuit design; integrated circuit packaging; light emitting diodes; optical design techniques; research and development; semiconductor epitaxial layers; silicon; LED manufacturing platform; LED module packaging technique; MOCVD reactor design; Si; chip design technique; epitaxial growth; finite element method; first principles molecular dynamics; light-emitting diode; metal-organic chemical vapour processing; silicon wafer; solid state lighting; Inductors; Light emitting diodes; MOCVD; Research and development; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Solid state lighting; Thermal stresses; Virtual manufacturing;
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
DOI :
10.1109/EPTC.2008.4763549