DocumentCode :
2519947
Title :
The development of Ge bottom cell for monolithic and stacked multi-junction applications
Author :
Krut, D.D. ; Cavicchi, B.T. ; Lillington, D.R.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
90
Abstract :
Ge solar cells have applications in space solar systems as well as terrestrial concentrator systems. Progress in fabrication of Ge cells to work under GaAs is described. While the fabrication of monolithic GaAs/Ge cells has not led to the theoretically predicted efficiencies, the Ge bottom cell still has applications in the monolithic stack. Currents achieved in Ge are sufficient for it to serve as a bottom cell of the three-junction GaAs/Ge stack. The diffusion length measured in Ge cells is sufficient to fabricate good cells. The effect of a BSR on electrical performance is considered. Radiation performance results for Ge cells are reported
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; solar cells; GaAs-Ge solar cells; Ge solar cells; diffusion length; electrical performance; monolithic solar cells; radiation performance; space solar systems; terrestrial concentrator systems; three-junction GaAs/Ge stack; Electric variables; Fabrication; Gallium arsenide; Germanium; Ion implantation; Length measurement; Lighting; MOCVD; Photovoltaic cells; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169188
Filename :
169188
Link To Document :
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